Midinfrared intersubband absorption on AlGaN/GaN-based...

Applied Physics Letters 2002 Vol. 80; Iss. 16

Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors

Hofstetter, Daniel, Diehl, Laurent, Faist, Jérôme, Schaff, William J., Hwang, Jeff, Eastman, Lester F., Zellweger, Christoph
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Volume:
80
Year:
2002
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1471569
File:
PDF, 301 KB
english, 2002
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