[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA ()] 2006 International SiGe Technology and Device Meeting - Fabrication of Ge-dots/Si Multilayered Structures by Combination of Low-Pressure CVD and Ni-Induced Lateral Crystallization
Shi, Y., Yan, B., Pu, L., Zhang, K.J., Zhu, J.M., Ma, G.B., Han, P., Zhang, R., Zheng, Y.D.Year:
2006
Language:
english
DOI:
10.1109/istdm.2006.246591
File:
PDF, 2.25 MB
english, 2006