GaN-Based LEDs With an HT-AlN Nucleation Layer Prepared on...

IEEE Photonics Technology Letters 2013 / 01 Vol. 25; Iss. 1

GaN-Based LEDs With an HT-AlN Nucleation Layer Prepared on Patterned Sapphire Substrate

Chang, Chung-Ying, Chang, Shoou-Jinn, Liu, C. H., Li, Shuguang, Chen, Evan
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Volume:
25
Language:
english
Journal:
IEEE Photonics Technology Letters
DOI:
10.1109/lpt.2012.2228637
Date:
January, 2013
File:
PDF, 431 KB
english, 2013
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