Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2014 / 09 Vol. 32; Iss. 5
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Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors
Ghadi, Hemant, Agarwal, Akshay, Adhikary, Sourav, Tongbram, Binita, Mandal, Arjun, Chakrabarti, Subhananda, Pendyala, Naresh Babu, Prajapati, Sachin, Kumar, AshwaniVolume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4894461
Date:
September, 2014
File:
PDF, 1.26 MB
english, 2014