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An Analytical Model of the Forward I– V Characteristics of 4H-SiC p-i-n Diodes Valid for a Wide Range of Temperature and Current
Bellone, S., Della Corte, F. G., Albanese, L. F., Pezzimenti, F.Volume:
26
Language:
english
Journal:
IEEE Transactions on Power Electronics
DOI:
10.1109/tpel.2011.2129533
Date:
October, 2011
File:
PDF, 787 KB
english, 2011