An Analytical Model of the Forward I– V Characteristics of...

An Analytical Model of the Forward I– V Characteristics of 4H-SiC p-i-n Diodes Valid for a Wide Range of Temperature and Current

Bellone, S., Della Corte, F. G., Albanese, L. F., Pezzimenti, F.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
26
Language:
english
Journal:
IEEE Transactions on Power Electronics
DOI:
10.1109/tpel.2011.2129533
Date:
October, 2011
File:
PDF, 787 KB
english, 2011
Conversion to is in progress
Conversion to is failed