Material and device properties of GaAs on sapphire grown by...

Material and device properties of GaAs on sapphire grown by metalorganic chemical vapor deposition

Kasai, Kazumi, Nakai, Kenya, Ozeki, Masashi
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Volume:
60
Year:
1986
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.337680
File:
PDF, 652 KB
english, 1986
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