Influence of interstitial carbon defects on electron transport in strained Si[sub 1−y]C[sub y] layers on Si(001)
Osten, H. J., Griesche, J., Gaworzewski, P., Bolze, K. D.Volume:
76
Year:
2000
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.125702
File:
PDF, 306 KB
english, 2000