Low substrate temperature molecular beam epitaxial growth...

Journal of Applied Physics 1991 Vol. 70; Iss. 5

Low substrate temperature molecular beam epitaxial growth and the critical layer thickness of InGaAs grown on GaAs

Elman, B., Koteles, Emil S., Melman, P., Ostreicher, K., Sung, C.
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Volume:
70
Year:
1991
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.349376
File:
PDF, 1.10 MB
english, 1991
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