Analytical Modeling of a Double Gate MOSFET Considering...

IEEE Transactions on Electron Devices 2013 / 11 Vol. 60; Iss. 11

Analytical Modeling of a Double Gate MOSFET Considering Source/Drain Lateral Gaussian Doping Profile

Nandi, Ashutosh, Saxena, Ashok K., Dasgupta, Sudeb
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2282632
Date:
November, 2013
File:
PDF, 995 KB
english, 2013
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