Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 2
![](/img/cover-not-exists.png)
Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique
Lin, Horng-Chih, Tsai, Tzu-I, Chao, Tien-Sheng, Jian, Min-Feng, Huang, Tiao-YuanVolume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3551527
File:
PDF, 1.28 MB
english, 2011