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Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy
Li, Z.-F., Lu, W., Ye, H.-J., Chen, Z.-H., Yuan, X.-Z., Dou, H.-F., Shen, S.-C., Li, G., Chua, S. J.Volume:
86
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.371112
File:
PDF, 298 KB
english, 1999