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Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique
Inoue, Koji, Yano, Fumiko, Nishida, Akio, Tsunomura, Takaaki, Toyama, Takeshi, Nagai, Yasuyoshi, Hasegawa, MasayukiVolume:
92
Year:
2008
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2891081
File:
PDF, 600 KB
english, 2008