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Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes
Lin, Yow-Jon, Ker, Quantum, Ho, Ching-Yao, Chang, Hsing-Cheng, Chien, Feng-TsoVolume:
94
Year:
2003
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1591417
File:
PDF, 293 KB
english, 2003