Damage accumulation in Si during high-dose self-ion...

Journal of Applied Physics 2004 Vol. 96; Iss. 3

Damage accumulation in Si during high-dose self-ion implantation

Zhong, Y., Bailat, C., Averback, R. S., Ghose, S. K., Robinson, I. K.
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Volume:
96
Year:
2004
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1763242
File:
PDF, 540 KB
english, 2004
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