Fermi-level pinning by carrier com- pensating midgap donor...

Physica status solidi 2014 / 07 Vol. 11; Iss. 7-8

Fermi-level pinning by carrier com- pensating midgap donor defect band in homoepitaxially grown p-type ZnO by MBE

Masamoto, T., Noda, K., Maejima, T., Natsume, R., Matsuo, T., Akiyama, A., Yukue, T., Hiroe, S., Abe, T., Kasada, H., Harada, Y., Ando, K.
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Volume:
11
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300618
Date:
July, 2014
File:
PDF, 452 KB
english, 2014
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