Transient response of n-channel metal-oxide-semiconductor...

Transient response of n-channel metal-oxide-semiconductor field-effect transistors during turnon at 10–25 °K

Tewksbury, S. K.
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Volume:
53
Year:
1982
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.331131
File:
PDF, 790 KB
english, 1982
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