Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si[sub 0.9]Ge[sub 0.1]
Uppal, Suresh, Willoughby, Arthur F. W., Bonar, Janet M., Zhang, JingVolume:
85
Year:
2004
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1775883
File:
PDF, 318 KB
english, 2004