Recombination lifetimes and surface recombination velocities of minority carriers in n-p junctions. A new method for their determination by means of a stationary amplitude-modulated electron beam
von Roos, OldwigVolume:
50
Year:
1979
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.326280
File:
PDF, 564 KB
english, 1979