Effects of oxygen content on properties of silicon oxide films prepared at room temperature by sputtering-type electron cyclotron resonance plasma
Furukawa, Katsuhiko, Liu, Yichun, Nakashima, Hiroshi, Gao, Dawei, Kashiwazaki, Yasuhiro, Uchino, Kiichiro, Muraoka, Katsunori, Tsuzuki, HirohisaVolume:
84
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.368683
File:
PDF, 339 KB
english, 1998