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Observation of metal–oxide–semiconductor transistor...

Observation of metal–oxide–semiconductor transistor operation using scanning capacitance microscopy

Nakakura, C. Y., Hetherington, D. L., Shaneyfelt, M. R., Shea, P. J., Erickson, A. N.
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Volume:
75
Year:
1999
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.125002
File:
PDF, 565 KB
english, 1999
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