Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 3
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Electrical properties of Er-doped In[sub 0.53]Ga[sub 0.47]As
Burke, Peter G., Lu, Hong, Rudawski, Nicholas G., Stemmer, Susanne, Gossard, Arthur C., Bahk, Je-Hyeong, Bowers, John E.Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3559480
File:
PDF, 1.08 MB
english, 2011