Molecular-beam epitaxy and characteristics of GaN[sub...

Molecular-beam epitaxy and characteristics of GaN[sub y]As[sub 1−x−y]Bi[sub x]

Huang, Wei, Oe, Kunishige, Feng, Gan, Yoshimoto, Masahiro
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Volume:
98
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2032618
File:
PDF, 388 KB
english, 2005
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