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[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA ()] 2006 International SiGe Technology and Device Meeting - Enhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping
Myronov, M., Sawano, K., Shiraki, Y.Year:
2006
Language:
english
DOI:
10.1109/istdm.2006.246609
File:
PDF, 2.30 MB
english, 2006