Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 3
Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
Lo, Chien-Fong, Kang, T. S., Liu, L., Ren, F., Pearton, S. J., Kim, Jinhyung, Jang, S., Laboutin, O., Cao, Y., Johnson, J. W.Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3593002
File:
PDF, 753 KB
english, 2011