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Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy
Fu, Y., Yun, F., Moon, Y. T., Özgür, Ü., Xie, J. Q., Ni, X. F., Biyikli, N., Morkoç, H., Zhou, Lin, Smith, David J., Inoki, C. K., Kuan, T. S.Volume:
99
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2170422
File:
PDF, 1.19 MB
english, 2006