Dislocation reduction in GaN grown on porous TiN networks...

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Fu, Y., Yun, F., Moon, Y. T., Özgür, Ü., Xie, J. Q., Ni, X. F., Biyikli, N., Morkoç, H., Zhou, Lin, Smith, David J., Inoki, C. K., Kuan, T. S.

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Volume:

Year:

2006

Language:

english

Journal:

Journal of Applied Physics

DOI:

10.1063/1.2170422

File:

PDF, 1.19 MB

english, 2006

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