[IEEE Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Grenoble, France (12-16 Sept. 2005)] Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - In-depth study of strained SGOI nMOSFETs down to 30nm gate length
Andrieu, F., Ernst, T., Faynot, O., Rozeau, O., Bogumilowicz, Y., Hartmann, J.-M., Brevard, L., Toffoli, A., Lafond, D., Dansas, H., Ghyselen, B., Fournel, F., Ghibaudo, G., Deleonibus, S.Year:
2005
Language:
english
DOI:
10.1109/essder.2005.1546644
File:
PDF, 709 KB
english, 2005