Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al[sub 2]O[sub 3] as gate dielectric
Lin, H. C., Yang, T., Sharifi, H., Kim, S. K., Xuan, Y., Shen, T., Mohammadi, S., Ye, P. D.Volume:
91
Year:
2007
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2814052
File:
PDF, 464 KB
english, 2007