Hot-electron properties of GaAs planar-doped barrier diodes

Journal of Applied Physics 1989 Vol. 66; Iss. 10

Hot-electron properties of GaAs planar-doped barrier diodes

Couch, N. R., Kearney, M. J.
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Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343734
File:
PDF, 595 KB
english, 1989
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