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Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate
Perlin, Piotr, Mattos, Laila, Shapiro, Noad A., Kruger, Joachim, Wong, William S., Sands, Tim, Cheung, Nathan W., Weber, Eicke R.Volume:
85
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.369554
File:
PDF, 337 KB
english, 1999