GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy...

Applied Physics Letters 2003 Vol. 82; Iss. 12

GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm

Tournié, E., Pinault, M.-A., Laügt, M., Chauveau, J.-M., Trampert, A., Ploog, K. H.
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Volume:
82
Year:
2003
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1563062
File:
PDF, 578 KB
english, 2003
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