Influence of the doping element on the electron mobility in...

Journal of Applied Physics 1998 Vol. 83; Iss. 6

Influence of the doping element on the electron mobility in n-silicon

Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.
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Volume:
83
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.367067
File:
PDF, 401 KB
english, 1998
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