[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Growth of tensile-strained Ge layer and highly strain-relaxed Ge1−xSnx buffer layer on silicon by molecular beam epitaxy

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