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Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements
Krispin, P., Spruytte, S. G., Harris, J. S., Ploog, K. H.Volume:
88
Year:
2000
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1290449
File:
PDF, 318 KB
english, 2000