Structural analysis of erbium sheet-doped GaAs grown by molecular-beam epitaxy, with ion channeling followed by Monte Carlo simulation
Nakata, Jyoji, Jourdan, Nicolas, Yamaguchi, Hiroshi, Takahei, Kenichiro, Yamamoto, Yasuich, Kido, YoshiakiVolume:
77
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.358660
File:
PDF, 1.68 MB
english, 1995