Independent determination of composition and relaxation of partly pseudomorphically grown Si-Ge layers on silicon by a combination of standard x-ray diffraction and transmission electron microscopy measurements
Bugiel, E., Zaumseil, P.Volume:
62
Year:
1993
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.109476
File:
PDF, 626 KB
english, 1993