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Channeling of 20–800-keV arsenic ions in the 〈110〉 and the 〈100〉 directions of silicon, and the roles of electronic and nuclear stopping
Wilson, R. G.Volume:
52
Year:
1981
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.329205
File:
PDF, 510 KB
english, 1981