[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Detailed physical simulation of program disturb mechanisms in Sub-50 nm NAND flash memory strings
Nguyen, C. D., Kuligk, A., Vexler, M. I., Klawitter, M., Beyer, V., Melde, T., Czernohorsky, M., Meinerzhagen, B.Year:
2010
Language:
english
DOI:
10.1109/sispad.2010.5604512
File:
PDF, 620 KB
english, 2010