Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2010 Vol. 28; Iss. 5
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GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide
Polyakov, A. Y., Markov, A. V., Duhnovsky, M. P., Mezhennyi, M. V., Donskov, A. A., Malakhov, S. S., Govorkov, A. V., Kozlova, Yu. P., Pavlov, V. F., Smirnov, N. B., Yugova, T. G., Belogorokhov, A. I.Volume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3488616
File:
PDF, 665 KB
english, 2010