Enhanced strain of InAs quantum dots by an InGaAs ternary...

Journal of Applied Physics 2006 Vol. 99; Iss. 2

Enhanced strain of InAs quantum dots by an InGaAs ternary layer in a GaAs matrix

Shin, Hyunho, Kim, Jong-Bong, Yoo, Yo-Han, Lee, Woong, Yoon, Euijoon, Yu, Young-Moon
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Volume:
99
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2137880
File:
PDF, 314 KB
english, 2006
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