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[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Improvement of current drive of Ge-nMISFETs by epitaxially grown n+-Ge:P source and drain
Moriyama, Yoshihiko, Kamimuta, Yuuichi, Kamata, Yoshiki, Ikeda, Keiji, Takeuchi, Shotaro, Nakamura, Yoshiaki, Sakai, Akira, Tezuka, TsutomuYear:
2014
DOI:
10.1109/istdm.2014.6874702
File:
PDF, 2.13 MB
2014