Growth and band gap of strained 〈110〉 Si1−xGex layers on...

Applied Physics Letters 1994 Vol. 65; Iss. 1

Growth and band gap of strained 〈110〉 Si1−xGex layers on silicon substrates by chemical vapor deposition

Liu, C. W., Sturm, J. C., Lacroix, Y. R. J., Thewalt, M. L. W., Perovic, D. D.
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Volume:
65
Year:
1994
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.113079
File:
PDF, 657 KB
english, 1994
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