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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - A novel bottom-up Ag contact (30nm diameter and 6.5 aspect ratio) technology by electroplating for 1Xnm and beyond technology
Chao-An Jong,, Po-Jung Sung,, Mei-Yi Lee,, Fu-Ju Hou,, Kehuey Wu,, Ying-Hao Su,, Bing-Mau Chen,, Chia-Wei Ho,, Ren-Jei Chung,, Yao-Jen Lee,, Wen-Fa Wu,, Chenming Hu,, Fu-Liang Yang,Year:
2011
Language:
english
DOI:
10.1109/iedm.2011.6131509
File:
PDF, 903 KB
english, 2011