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Material and device properties of 3′ diameter GaAs-on-Si with buried P-type layers
S.J. Pearton, K.M. Lee, N.M. Haegel, C.-J. Huang, S. Nakahara, F. Ren, V. Scarpelli, K.T. Short, S.M. VernonVolume:
3
Year:
1989
Language:
english
Pages:
6
DOI:
10.1016/0921-5107(89)90024-x
File:
PDF, 538 KB
english, 1989