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Effect of deformation-induced defects on the Fermi level position at recombination centers in n-Si
B. Pohoryles, A. MorawskiVolume:
4
Year:
1989
Language:
english
Pages:
3
DOI:
10.1016/0921-5107(89)90230-4
File:
PDF, 197 KB
english, 1989