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Optoelectronic and structural properties of Er-doped sputter-deposited gallium–arsenic–nitrogen films
Zanatta, A. R., Ribeiro, C. T. M., Freire, F. L.Volume:
90
Year:
2001
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1388568
File:
PDF, 826 KB
english, 2001