Defects produced in Si p+n diodes by B+ implantation at...

Journal of Applied Physics 1994 Vol. 75; Iss. 7

Defects produced in Si p+n diodes by B+ implantation at liquid nitrogen temperature or −60 °C

Kase, Masataka, Kikuchi, Yoshio, Kimura, Mami, Mori, Haruhisa, Liebert, Reuel B.
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Volume:
75
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.356094
File:
PDF, 1.35 MB
english, 1994
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