[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)

The file will be sent to your email address. It may take up to 1-5 minutes before you receive it.

The file will be sent to you via the Telegram messenger. It may take up to 1-5 minutes before you receive it.

Note: Make sure you have linked your account to Z-Library Telegram bot.

The file will be sent to your Kindle account. It may take up to 1–5 minutes before you receive it.

Please note: you need to verify every book you want to send to your Kindle. Check your mailbox for the verification email from Amazon Kindle.