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Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devices
J. Tardy, J.L. Perrossier, F. Krafft, S.K. Krawczyk, I. Thomas, D. BarbierVolume:
9
Year:
1991
Language:
english
Pages:
6
DOI:
10.1016/0921-5107(91)90195-2
File:
PDF, 1018 KB
english, 1991