The role of extended defects on transient boron diffusion...

Materials Science and Engineering: B 1992 Vol. 12; Iss. 4

The role of extended defects on transient boron diffusion in ion-implanted silicon

R.J. Schreutelkamp, J.S. Custer, V. Raineri, W.X. Lu, J.R. Liefting, F.W. Saris, K.T.F. Janssen, P.F.H.M. van der Meulen, R.E. Kaim
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Volume:
12
Year:
1992
Language:
english
Pages:
19
DOI:
10.1016/0921-5107(92)90001-p
File:
PDF, 2.96 MB
english, 1992
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