Intraband absorption in the 8–12 μm band from Si-doped...

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Zhuang, Q. D., Li, J. M., Li, H. X., Zeng, Y. P., Pan, L., Chen, Y. H., Kong, M. Y., Lin, L. Y.

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Volume:

Year:

1998

Language:

english

Journal:

Applied Physics Letters

DOI:

10.1063/1.122870

File:

PDF, 365 KB

english, 1998

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